DMN3150L n-channel enhancement mode field effect transistor features ? low on-resistance: r ds(on) < 54m ? @ v gs = 10v r ds(on) < 72m ? @ v gs = 4.5v r ds(on) < 115m ? @ v gs = 2.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 30 v gate-source voltage v gss 12 v drain current (note 1) t a = 25c t a = 70c i d 3.8 3.1 a drain current (note 1) pulsed i dm 15 a body-diode continuous current (note 1) i s 2.0 a thermal characteristics characteristic symbol value unit total power dissipation (note 1) p d 1.4 w thermal resistance, junction to ambient @t a = 25c (note 1) r ja 90 c/w operating and storage temperature range t j, t stg -55 to +150 c sot-23 top view source equivalent circuit gate drain d gs pin configuration product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 800 na v ds = 28v, v gs = 0v gate-body leakage i gss ? ? 80 800 na v gs = 12v, v ds = 0v v gs = 19v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs ( th ) 0.62 0.92 1.4 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? 39 52 90 54 72 115 m v gs = 10v, i d = 3.8a v gs = 4.5v, i d = 3.6a v gs = 2.5v, i d = 3.1a forward transconductance |y fs | ? 3 ? s v ds = 5v, i d = 3.1a source-drain diode forward voltage v sd ? ? 1.16 v v gs = 0v, i s = 2.0a dynamic characteristics gate resistance r g - 4.17 - ? v ds =0v, v gs = 0v, f = 1mhz total gate charge (10v) q g - 8.2 - nc v gs = 10 v, v ds = 10v, i d = 3.8 a total gate charge (4.5v) q g - 3.7 - nc v gs =4.5 v, v ds = 10v, i d = 3.8 a gate-source charge q g s - 0.7 - nc gate-drain charge q g d - 1.1 - nc turn-on delay time t d ( on ) - 1.14 - ns v dd = 15v, v gen = 10v, r gen = 6 ? , r l = 3.9 ? turn-on rise time t r - 3.49 - ns turn-off delay time t d ( off ) - 15.02 - ns turn-off fall time t f - 3.26 - ns input capacitance c iss ? 305 ? pf v ds = 5v, v gs = 0v f = 1.0mhz output capacitance c oss ? 74 ? pf reverse transfer capacitance c rss ? 48 ? pf notes: 1. device mounted on fr-4 pcb. t 5 sec. 2. no purposefully added lead. 3. short duration pulse test used to minimize self-heating effect. DMN3150L sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification
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